STD10NM65N Datasheet
STD10NM65N Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM65N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minim.
*With To-252(DPAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*Load switch
*Power management
*ABSOLUTE MAXIMUM RATINGS(Ta=.
STD10NM65N Datasheet (STMicroelectronics)
STMicroelectronics
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to y.
Order code
VDS @ Tjmax.
RDS(on) max.
ID
STD10NM65N
710 V
0.48 Ω
9A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
Applications
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation o.