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STD10NM60N - N-Channel Power MOSFET

General Description

of MDmesh technology.

and gate charge.

Key Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD10NM60N 600 V 550 mΩ 10 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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STD10NM60N Datasheet N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD10NM60N 600 V 550 mΩ 10 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.