Datasheet Summary
N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in a DPAK package
Features
23 1 DPAK
D(2, TAB)
Order code
RDS(on) max.
600 V
550 mΩ
10 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
G(1)
Description
S(3)
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical
AM01475v1_noZen structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high...
