STMicroelectronics STD11N60M6
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.| Part No. | STD11N60M6 |
|---|---|
| Datasheet | STD11N60M6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD11N60M6 600 V 520 mΩ 8A● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected PTOT 90 W
APPLICATIONS
● Switching applications● LLC converters
● Boost PFC converters
DESCRIPTION
STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD11N60M6 Product summary Order code STD11N60M6 Marking 11N60M6 Package DPAK Packing Tape and reel DS13290 - Rev 4 - March 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous)...
