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STD11N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Key Features

  • Order code VDS STD11N60M2-EP 600 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS STD11N60M2-EP 600 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected RDS(on) max. 0.595 Ω ID 7.5 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.