STMicroelectronics STD12N60DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STD12N60DM6 |
|---|---|
| Datasheet | STD12N60DM6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 10A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD12N60DM6 600 V 390 mΩ 10 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STD12N60DM6 Product summary Order code STD12N60DM6 Marking 12N60DM6 Package DPAK Packing Tape and reel DS13509 - Rev 1 - October 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous...
