STMicroelectronics STD12N60DM2AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STD12N60DM2AG |
|---|---|
| Datasheet | STD12N60DM2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 600V 10A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD12N60DM2AG VDS @ TJ max. 650 V RDS(on) max. 430 mΩ ID 10 A● AEC-Q101 qualified
● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Product summary Order code STD12N60DM2AG Marking 12N60DM2 Package DPAK Packing Tape and reel DS12209 - Rev 5 - July 2023 For further information contact your local STMicroelectronics sales office. STD12N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area.
