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STD12N50DM2 - N-CHANNEL POWER MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.

Key Features

  • Order code STD12N50DM2 VDS 500 V RDS(on) max. 0.350 Ω ID 11 A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD12N50DM2 N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STD12N50DM2 VDS 500 V RDS(on) max. 0.350 Ω ID 11 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.