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STD12N50M2 - N-Channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS RDS(on)max. ID STD12N50M2 500 V 0.38 Ω 10 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD12N50M2 Datasheet N-channel 500 V, 0.325 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D (2 , TAB) G( 1) S(3) AM15572V1 Features Order code VDS RDS(on)max. ID STD12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.