STMicroelectronics STD12NF06
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STD12NF06 |
|---|---|
| Datasheet | STD12NF06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
● Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link STD12NF06T4 Product summary Order code STD12NF06T4 Marking D12NF06 Package DPAK Packing Tape and reel DS2577 - Rev 8 - October 2022 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope EAS(3) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 200 A/ns, VDD = 80% V(BR)DSS 3.
