STMicroelectronics STD12NM50N
N-channel Power MOSFET
DESCRIPTION
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagramAPPLICATIONS
● Switching application Order codes Part number STB12NM50N STD12NM50N STF12NM50N STP12NM50N Marking B12NM50N D12NM50N F12NM50N P12NM50N Package D²PAK DPAK TO-220FP TO-220 Packaging Tape & reel Tape & reel Tube Tube November 2006 Rev 7 1/18 18 Contents STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................