STMicroelectronics STD13N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STD13N60M2 |
|---|---|
| Datasheet | STD13N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 11A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS at TJ max. RDS(on) max. ID STD13N60M2 650 V 380 mΩ 11 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01476v1_tab Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD13N60M2 Product summary Order code STD13N60M2 Marking 13N60M2 Package DPAK Packing Tape and reel DS9632 - Rev 6 - June 2023 For further information contact your local STMicroelectronics sales office. STD13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
