STD155N3H6 Datasheet | STMicroelectronics

STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness Application - Switching applications - Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes...