STMicroelectronics STD16N65M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STD16N65M2 |
|---|---|
| Datasheet | STD16N65M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 11A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS at TJ max. RDS(on) max. ID STD16N65M2 710 V 360 mΩ 11 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01476v1_tab Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD16N65M2 Product summary Order code STD16N65M2 Marking 16N65M2 Package DPAK Packing Tape and reel DS10675 - Rev 2 - May 2023 For further information contact your local STMicroelectronics sales office. STD16N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
