STMicroelectronics STD1805
The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.| Part No. | STD1805 |
|---|---|
| Datasheet | STD1805 Download |
| Manufacturer |  STMicroelectronics |
| Description | LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: CCFL DRIVERS s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHINGAPPLICATIONS
s INTERNAL SCHEMATIC DIAGRAMDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 10 2 15 -65 to 150 150 Unit V V V A A A W o o C C November 2003 1/8 STD1805 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 8.33 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 40 V V EB = 4 V I C = 100 µ A 150 Min. Typ. Max. 0.1 0.1 Unit µA µA V V (BR)CEO ∗ Collect...
