STMicroelectronics STD180N4F6
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD180N4F6 |
|---|---|
| Datasheet | STD180N4F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applications● Power tools
DESCRIPTION
Order code STD180N4F6 Table 1: Device summary Marking Package 180N4F6 DPAK Packing Tape and reel July 2016 DocID028602 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/16 Contents Contents STD180N4F6 1 Electrical ratings .....................................
