Datasheet Summary
N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package
- preliminary data
Figure 1: Internal schematic diagram
Features
Order code STD180N4F6
VDS 40 V
RDS(on) max. 2.8 mΩ
ID 80 A
PTOT 130 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
- Power tools
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STD180N4F6
Table 1: Device summary
Marking
Package
180N4F6
DPAK
Packing Tape and...