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STD180N4F6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STD180N4F6 N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - preliminary data Figure 1: Internal schematic.

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STD180N4F6 Table 1: Device summary Marking Package 180N4F6 DPAK Packing Tape and reel July 2016 DocID028602 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation.

Key Features

  • Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

STD180N4F6 Distributor