STD1NC70Z Description
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.. ∆VBV = αT (25°-T) BVGSO(25°) (#) When mounted on minimum Footprint PROTECTION.