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STD27N3LH5 - N-channel Power MOSFET

General Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).

Figure 1.

Key Features

  • Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses ID 27 A 27 A 27 A.

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STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses ID 27 A 27 A 27 A Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). IPAK 3 2 1 3 1 DPAK TO-220 3 2 1 Figure 1. Internal schematic diagram D (TAB or 2) G (1) Table 1.