STD27N3LH5 Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). IPAK 3 2 1 3 1 DPAK TO-220 3 2 1 Figure 1. Internal schematic diagram D (TAB or 2) G (1) Table.
STD27N3LH5 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
- Switching