STD2HNK60Z Datasheet | STMicroelectronics

STD2HNK60Z, STD2HNK60Z-1 N-channel 600 V, 3.5 Ω typ., 2 A Super MESH Power MOSFETs in DPAK and IPAK packages 3 1 DPAK IPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes RDS(on) max. 600 V 4.8 Ω 2A STD2HNK60Z-1 - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected Applications - Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the Super MESH technology by STMicroelectronics, an optimization of the well-established Power MESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD2HNK60Z STD2HNK60Z-1 Product summary Order code Marking D2HNK60Z Package DPAK...