STD2HNK60Z-1 Overview
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. STD2HNK60Z, STD2HNK60Z-1 Electrical ratings 1 Electrical ratings Table.
STD2HNK60Z-1 Key Features
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected