STMicroelectronics STD30NF03L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD30NF03L |
|---|---|
| Datasheet | STD30NF03L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Symb ol V DS VGS ID V DGR I D(● ) m
ABSOLUTE MAXIMUM RATINGS
Parameter Value 30 30 ± 20 30 19 120 o Unit V V V A A A W W /o C m/J o o taS hee t4U .co I DM (●● ) P tot Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (pulsed) Drain Current (continuous) at Tc = 100 o C T otal Dissipation at Tc = 25 C Derating Factor 40 0.27 100 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 15A , VDD = 15V E AS ( 1 ) T st g Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature C C w.D a (●●) Pulse width limited by safe operating area (●)Current limited by the package October 1999 1/8 ww STD30NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junctio...
