STMicroelectronics STD30NF03LT
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.DESCRIPTION
Internal schematic diagramAPPLICATIONS
● Switching application Order codes Part number STD30NF03LTT4 Marking D30NF03LT Package DPAK Packaging Tape & reel February 2007 Rev 3 1/13 13 Contents STD30NF03LT Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STD30NF03LT Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID(1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- sou...