STMicroelectronics STD3N40K3
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.FEATURES
N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™ Zener-protected Power MOSFET in a DPAK package Datasheet — production data Order code VDSS RDS(on) max ID STD3N40K3 400 V < 3.4 Ω 2 A Pw 30 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
TAB 3 1 DPAK Figure 1. Internal schematic diagram ' 7$% * 6 AM01476v1 Table 1. Device summary Order code STD3N40K3 Marking 3N40K3 Package DPAK Packaging Tape and reel July 20