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STD3N40K3 - N-CHANNEL POWER MOSFET

General Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • N-channel 400 V, 2.7 Ω typ. , 2 A SuperMESH3™ Zener-protected Power MOSFET in a DPAK package Datasheet.
  • production data Order code VDSS RDS(on) max ID STD3N40K3 400 V < 3.4 Ω 2 A Pw 30 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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STD3N40K3 Features N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™ Zener-protected Power MOSFET in a DPAK package Datasheet — production data Order code VDSS RDS(on) max ID STD3N40K3 400 V < 3.4 Ω 2 A Pw 30 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.