STD40NF06 Datasheet PDF

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL , AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 20 40 28 160 85 0.57 10 250 -55 to 17...