STD45N10F7 Overview
Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- @ VGS = 10 V
- Ultra low on-resistance
- 100% avalanche tested ID 45 A PTOT 60 W
