| Part Number | STD45N10F7 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Cu.
*Drain Current *ID= 45A@ TC=25℃ *Drain Source Voltage- : VDSS= 100V(Min) *Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Swi. |
STD45N10F7 Datasheet and Specifications PDF
The STD45N10F7 is a N-Channel MOSFET.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | STD45N10F7 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3.
Order codes
STD45N10F7 STI45N10F7 STP45N10F7
VDS
RDS(on) max.(1)
100 V 0.018 Ω
1. @ VGS = 10 V
* Ultra low on-resistance * 100% avalanche tested ID 45 A PTOT 60 W Applications * Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary S. |