STMicroelectronics STD4NB40
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.STD4NB40 Specifications
- Drain-Source Resistance : 1.8Ω
- Min Breakdown Voltage : 400V
- Terminals : 2
- Max Power Dissipation : 60W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | STD4NB40 |
|---|---|
| Datasheet | STD4NB40 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ± 30 4 2.52 16 60 0.47 4 –65 to 150 150 (1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C 1/10 (●)Pulse width limited by safe operating area STD4NB40/STD4NB40-1 THERMAL DATA Rth...
