Datasheet Details
| Part number | STD4NB40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 398.09 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD4NB40_STMicroelectronics.pdf |
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Overview: N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET TYPE STD4NB40 .. s TYPICAL s s s s STD4NB40 STD4NB40-1 VDSS 400 V RDS(on) < 1.8 Ω ID 4A RDS(on) = 1.
| Part number | STD4NB40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 398.09 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD4NB40_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELE, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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