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STD4NB40-1 - N-CHANNEL MOSFET

Download the STD4NB40-1 datasheet PDF. This datasheet also covers the STD4NB40 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD4NB40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STD4NB40 N-CHANNEL MOSFET
STD4NB25 N-CHANNEL MOSFET
STD4N20 N-CHANNEL MOSFET
STD4N25 N-CHANNEL MOSFET
STD4N52K3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET TYPE STD4NB40 www.DataSheet4U.com s TYPICAL s s s s STD4NB40 STD4NB40-1 VDSS 400 V RDS(on) < 1.8 Ω ID 4A RDS(on) = 1.47 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DPAK TO-252 IPAK TO-251 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.