STD4NB40-1 Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM...