STD4NB40-1 Datasheet | STMicroelectronics

N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK Power MESH™ MOSFET TYPE STD4NB40 .. s TYPICAL s s s s STD4NB40 STD4NB40-1 VDSS 400 V RDS(on) < 1.8 Ω ID 4A RDS(on) = 1.47 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DPAK TO-252 IPAK TO-251 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELE, INDUSTRIAL, AND LIGHTING...