Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Features
- Order codes
VDSS
RDS(on) max
ID
Pw
STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W 2.5 A 20 W
(1)
2.5 A 45 W 2.5 A 45 W
1. Limited by package.
- 100% avalanche tested.
- Extremely high dv/dt capability.
- Gate charge minimized.
- Very low intrinsic capacitance.
- Improved diode reverse recovery
characteristics.
- Zener-protected.
STD4N52K3 Datasheet
