STMicroelectronics STD4N90K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.FEATURES
Order code STD4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 3A Figure 1: Internal schematic diagram● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD4N90K5 Table 1: Device summary Marking Package 4N90K5 DPAK Packing Tape and reel November 2016 DocID029956 Rev 1 This is information on a product in full production. 1/15 Contents Contents STD4N90K5 1 Electrical ratings ...............