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STD52P3LLH6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.

Key Features

  • Order codes V DSS STD52P3LLH6 30 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max 12 mΩ ID 52 A PTOT 70 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD52P3LLH6 Datasheet P-channel 30 V, 10 mΩ typ., 52 A, STripFET H6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes V DSS STD52P3LLH6 30 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max 12 mΩ ID 52 A PTOT 70 W Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.