STMicroelectronics STD52P3LLH6
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.| Part No. | STD52P3LLH6 |
|---|---|
| Datasheet | STD52P3LLH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-Channel 30V 52A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes V DSS STD52P3LLH6 30 V● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss RDS(on) max 12 mΩ ID 52 A PTOT 70 W
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking Package Packing 52P3LLH6 DPAK Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. STD52P3LLH6 Electrical ratings 1 Note: Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature TJ Max. operating junction temperature 1. Pulse width limited by safe operating area.
