STD52P3LLH6 Datasheet | STMicroelectronics

P-channel 30 V, 10 mΩ typ., 52 A, STrip FET H6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes V DSS 30 V - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss RDS(on) max 12 mΩ ID 52 A PTOT 70 W Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STrip FET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages. Product status link STD52P3LLH6 Product summary Order code Marking Package Packing 52P3LLH6 DPAK Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev...