STD52P3LLH6 Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages. Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking Package Packing 52P3LLH6 DPAK Tape and reel Note:.
STD52P3LLH6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss