STD60N3LH5 Overview
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Key Features
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
