STD60N3LH5 Datasheet | STMicroelectronics

N-channel 30 V, 0.0072 Ω typ., 48 A STripFET™ V Power MOSFET in a DPAK package - not remended for new design Features Order code VDS @ Tjmax RDS(on) max TAB t(s)3 c1 duDPAK olete ProFigure 1. Internal schematic diagram Obs'7$% uct(s) -- te Prod6 STD60N3LH5 35 V 0.008 Ω 48 A - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - Very low switching gate charge - High avalanche ruggedness - Low gate drive power losses Applications - Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state...