Datasheet Details
| Part number | STD60N3LH5 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 449.49 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STD60N3LH5 Datasheet
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General Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.
The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Table 1.
Key Features
- Order code VDS @ Tjmax RDS(on) max ID TAB t(s)3 c1 duDPAK olete ProFigure 1. Internal schematic diagram Obs' 7$% uct(s) -.
- te Prod6 STD60N3LH5 35 V 0.008 Ω 48 A.
- RDS(on).
- Qg industry benchmark.
- Extremely low on-resistance RDS(on).
- Very low switching gate charge.
- High avalanche ruggedness.
- Low gate drive power losses.