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STD65N160M9 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

Key Features

  • Order code VDS RDS(on) max. ID STD65N160M9 650 V 160 mΩ 20 A.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Zener-protected S(3) AM01476v1_tab Product status link STD65N160M9.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD65N160M9 Datasheet N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) Features Order code VDS RDS(on) max. ID STD65N160M9 650 V 160 mΩ 20 A • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested • Zener-protected S(3) AM01476v1_tab Product status link STD65N160M9 Applications • High efficiency switching applications Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.