STD80N4F6 Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD80N4F6 STU80N4F6 Table.
STD80N4F6 Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness