Datasheet Details
| Part number | STD80N4F6 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.08 MB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STD80N4F6 Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Table 1.
Key Features
- TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram $ 4!" ' Order codes STD80N4F6 STU80N4F6 VDS 40 V RDS(on) max ID 6.0 mΩ 6.3 mΩ 80 A.
- Low gate charge.
- Very low on-resistance.
- High avalanche ruggedness.