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STD80N6F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate

structure.

the lowest RDS(on) in all packages.

Table 1.

Key Features

  • 7$%   '3$. Order code STD80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package.
  • Designed for automotive.

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Full PDF Text Transcription for STD80N6F6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD80N6F6. For precise diagrams, and layout, please refer to the original PDF.

STD80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features 7$%   '3$. Order...

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a DPAK package Datasheet - production data Features 7$%   '3$. Order code STD80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate *  structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STD80N

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