STMicroelectronics STD888
The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.| Part No. | STD888 |
|---|---|
| Datasheet | STD888 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH CURRENT / HIGH PERFORMANCE / LOW VOLTAGE PNP TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGERAPPLICATIONS
s HEAVY LOAD DRIVERDESCRIPTION
DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj March 2003 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature o Value -60 -30 -6 -5 -10 15 -65 to 150 150 Unit V V V A A W o o C C 1/6 STD888 THERMAL DATA R thj-case● Thermal Resistance Junction-Case Max 8.33 o C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -6 V I C = -10 mA -30 T j = 100 o C Min. Typ. Max. -10...
