STMicroelectronics STD95NH02L
N-CHANNEL STripFET MOSFET
FEATURES
Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc● Conduction losses reduced d● Switching losses reduced ro● Low threshold device 80A(1) 80A(1) te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Telecom and Computer capplications. roduApplication Obsolete P● Switching applications 3 2 1 IPAK 3 1 DPAK Figure 1. Internal schematic diagram Table 1. Device summary Order code STD95NH02LT4 STD95NH02L-1 Marking D95NH02L D95NH02L Package DPAK IPAK Packaging Tape & reel Tube August 2007 Rev 4 1/16 16 Contents Contents STD95NH02L - STD95NH02L-1 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .