STMicroelectronics STD9N10
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| Part No. | STD9N10 |
|---|---|
| Datasheet | STD9N10 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (● ) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor St orage Temperature Max. Operating Junction Temperature o o o Value 100 100 ± 20 9 6 36 45 0.3 -65 to 175 175 Uni t V V V A A A W W/ o C o o C C (●) Pulse width limited by safe operating area March 1996 1/10 STD9N10 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose...
