DESCRIPTION
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE STP9NM60 STD9NM60T4 STD9NM60-1 MARKING P9NM60 D9NM60 D9NM60 June 2003 PACKAGE TO-220 DPAK IPAK PACKAGING TUBE TAPE & REEL TUBE 1/9 STP9NM60 / STD9NM60 / STD9NM60-1 ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt ≤400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STMicroelectronics
