STMicroelectronics STD9NM60N
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STD9NM60N |
|---|---|
| Datasheet | STD9NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 1 DPAK Figure 1. Internal schematic diagram $ ' 3 Table 1. Device summary Order codes STD9NM60N STF9NM60N STP9NM60N Marking 9NM60N Packages DPAK TO-220FP TO-220 !- V Packaging Tape and reel Tube October 2010 Doc ID 18063 Rev 1 1/16 16 Contents Contents STD9NM60N, STF9NM60N, STP9NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
