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STDRIVEG600W Datasheet High voltage half-bridge gate driver

Manufacturer: STMicroelectronics

Overview: STDRIVEG600W Datasheet High voltage half-bridge gate driver for GaN transistors Product status link STDRIVEG600W.

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General Description

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

Key Features

  • dV/dt immunity ±200 V/ns.
  • Driver current capability:.
  • 1.3/2.4 A source/sink typ @ 25 °C, 6 V.
  • 5.5/6 A source/sink typ @ 25 °C, 15 V.
  • Separated turn on and turn off gate driver pins.
  • 45 ns propagation delay with tight matching.
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis.
  • Interlocking function.
  • UVLO on low-side and high-side sections.
  • Dedicated pin for shut down functionality.
  • Over temperature prote.

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