STDRIVEG600W Description
The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5.
STDRIVEG600W Key Features
- dV/dt immunity ±200 V/ns
- Driver current capability
- 1.3/2.4 A source/sink typ @ 25 °C, 6 V
- 5.5/6 A source/sink typ @ 25 °C, 15 V
- Separated turn on and turn off gate driver pins
- 45 ns propagation delay with tight matching
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Interlocking function
- UVLO on low-side and high-side sections
- Dedicated pin for shut down functionality