STMicroelectronics STF10NM60N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STF10NM60N |
|---|---|
| Datasheet | STF10NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF10NM60N 600 V 550 mΩ 10 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Product status link STF10NM60N Product summary Order code STF10NM60N Marking 10NM60N Package TO-220FP Packing Tube DS14498 - Rev 1 - November 2023 For further information contact your local STMicroelectronics sales office. STF10NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (3) Peak diode recovery voltage s...
