STF10NM60ND Datasheet | STMicroelectronics

N-channel 600 V, 570 mΩ typ., 8 A FDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_no Zen_no Tab Features Order code VDS at TJ max. RDS(on) max. 650 V 600 mΩ 8A - Fast-recovery body diode - Low gate charge and input capacitance - Low on-resistance RDS(on) - 100% avalanche tested - High dv/dt ruggedness Applications - Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device Features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STF10NM60ND Product summary Order code Marking 10NM60ND Package TO-220FP Packing Tube DS14343...