Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Drain-source on-resistance:
RDS(on) ≤ 0.6Ω (max)
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Reliable device for use in a wide variety of applications
-...
