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STF10NM60ND Datasheet

The STF10NM60ND is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberSTF10NM60ND
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
* Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max)
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=2.
Part NumberSTF10NM60ND
DescriptionN-channel Power MOSFET
ManufacturerSTMicroelectronics
Overview This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior . Order code VDS at TJ max. RDS(on) max. ID STF10NM60ND 650 V 600 mΩ 8A
* Fast-recovery body diode
* Low gate charge and input capacitance
* Low on-resistance RDS(on)
* 100% avalanche tested
* High dv/dt ruggedness Applications
* Switching applications Description This FDmesh II Powe.

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