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STF11N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Key Features

  • 23 1 TO-220FP D(2) Order code VDS RDS(on) max. STF11N60M2-EP 600 V 0.595 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 7.5 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Features 23 1 TO-220FP D(2) Order code VDS RDS(on) max. STF11N60M2-EP 600 V 0.595 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID 7.5 A Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.