STMicroelectronics STF11N65M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.FEATURES
Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3)
APPLICATIONS
● Switching applications NG1D2S3ZDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF11N65M2 Product summary Order code STF11N65M2 Marking 11N65M2 Package TO-220FP Packing Tube DS10136 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. STF11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Pe...