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STF13N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Order code STF13N65M2 STFI13N65M2 VDS RDS(on) max 650 V 0.43 Ω ID 10A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF13N65M2, STFI13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Features Order code STF13N65M2 STFI13N65M2 VDS RDS(on) max 650 V 0.43 Ω ID 10A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.