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STF13NM50N - N-channel Power MOSFET

General Description

This product is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB13NM50N STB13NM50N-1 STF13NM50N www. DataSheet4U. com STP13NM50N STW13NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh™ Power MOSFET Features Type STB13NM50N STB13NM50N-1 STF13NM50N www.DataSheet4U.com STP13NM50N STW13NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) <0.32Ω <0.32Ω <0.32Ω <0.32Ω <0.32Ω ID 3 12A 12A 12A(1) 12A 12A TO-220 1 2 3 12 I²PAK TO-247 3 1 2 3 1 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP D²PAK Internal schematic diagram Description This product is realized with the second generation of MDmesh™ technology.