STF20NM65N Datasheet | STMicroelectronics

STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET Features Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc - 100 % avalanche tested rod - Low input capacitance and gate charge P - Low gate input resistance lete Application so - Switching applications Ob Description ) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d pany’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete efficiency converters. 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 Obso !-V Table 1. Device summary Order codes STP20NM65N STF20NM65N Marking 20NM65N 20NM65N Package TO-220 TO-220FP Packaging Tubes Tubes May 2011 Doc ID 13845 Rev...