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STF20NM65N - N-channel Power MOSFET

General Description

) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology.

This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge.

Key Features

  • Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc.
  • 100 % avalanche tested rod.
  • Low input capacitance and gate charge P.
  • Low gate input resistance lete.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET Features Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc ■ 100 % avalanche tested rod ■ Low input capacitance and gate charge P ■ Low gate input resistance lete Application so ■ Switching applications Ob Description ) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete efficiency converters. 3 2 1 TO-220 3 2 1 TO-220FP Figure 1.