STF20NM65N Description
) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vertical structure to the d pany’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete efficiency converters.
STF20NM65N Key Features
- 100 % avalanche tested rod
- Low input capacitance and gate charge P
- Low gate input resistance
- Switching
STF20NM65N Applications
- These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. This revolutionary Power MOSFET u associates a new vert