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STF24N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology.

Key Features

  • Order code VDS @TJmax RDS(on) max. STF24N60M2 650 V 190 mΩ.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

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STF24N60M2 Datasheet N-channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) Features Order code VDS @TJmax RDS(on) max. STF24N60M2 650 V 190 mΩ • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters • Resonant converters ID 18 A Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.